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IPI60R125CPXKSA1
IPI60R125CPXKSA1Reference image

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Mfr. #:
IPI60R125CPXKSA1
Batch:
new
Description:
Through hole N channel 650 V 25A (Tc) 208W (Tc) PG-TO262-3
Datasheet:
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Specifications
frequently asked question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series CoolMOS?
Package Device
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 650 V
Current at 25°C - Continuous Drain (Id) 25 A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10 V
On-Resistance (max) at Id, Vgs 125 mOhm @ 16 A, 10 V
Vgs(th) (max) at Id 3.5 V @ 1.1 mA
Gate Charge?(Qg) (max) at Vgs 70 nC @ 10 V
Vgs (max) ±20 V
Various Vds Input Capacitance (Ciss) (max) 2500 pF @ 100 V
FET Function -
Power Dissipation (max) 208W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3
Package/Case TO-262-3, Long Lead, I2Pak, TO-262AA
Other product information

Advantage price,IPI60R125CPXKSA1 in stock can be shipped on the same day

In Stock: 490
Qty.Unit PriceExt. Price
1+ $6.8215 $6.8215
10+ $5.8442 $58.442
100+ $4.8702 $487.02
500+ $4.2973 $2148.65
1000+ $3.8676 $3867.6
2000+ $3.6241 $7248.2
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
490
Minimum:
1
MPQ:
1
Multiples:
1
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