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IPW65R041CFDFKSA2
IPW65R041CFDFKSA2Reference image

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Mfr. #:
IPW65R041CFDFKSA2
Batch:
new
Description:
Through Hole N Channel 650 V 68.5A (Tc) 500W (Tc) PG-TO247-3
Datasheet:
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Specifications
frequently asked question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series CoolMOS? CFD2
Package Device
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 650 V
Current at 25°C - Continuous Drain (Id) 68.5A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 41 mOhm @ 33.1A, 10V
Vgs(th) (max) at Id 4.5V @ 3.3mA
Gate Charge?(Qg) (max) at Vgs 300 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 8400 pF @ 100 V
FET function -
Power dissipation (max) 500W (Tc)
Operating temperature -55°C ~ 150°C (TJ)
Mounting type Through hole
Supplier device package PG-TO247-3
Package/case TO-247-3
Other product information

Advantage price,IPW65R041CFDFKSA2 in stock can be shipped on the same day

In Stock: 379
Qty.Unit PriceExt. Price
1+ $15.1238 $15.1238
30+ $12.2442 $367.326
120+ $11.5239 $1382.868
510+ $10.4435 $5326.185
1020+ $9.5792 $9770.784
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
379
Minimum:
1
MPQ:
1
Multiples:
1
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