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FQPF10N20C
FQPF10N20CReference image

Images are for reference only

Mfr. #:
FQPF10N20C
Mfr.:
Batch:
new
Description:
Through hole N channel 200 V 9.5A (Tc) 38W (Tc) TO-220F-3
Datasheet:
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Specifications
frequently asked question
Product AttributeAttribute Value
Manufacturer onsemi
Series QFET?
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain Source Voltage (Vdss) 200 V
Current at 25°C - Continuous Drain (Id) 9.5A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On Resistance (max) at Id, Vgs 360 mOhm @ 4.75A, 10V
Vgs(th) (max) at Id 4V @ 250μA
Gate Charge?(Qg) (max) at Vgs 26 nC @ 10 V
Vgs (max) ±30V
Various Vds Input Capacitance (Ciss) (Max) 510 pF @ 25 V
FET Function -
Power Dissipation (Max) 38W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220F-3
Package/Case TO-220-3 Full Package
Other product information

Advantage price,FQPF10N20C in stock can be shipped on the same day

In Stock: 704
Qty.Unit PriceExt. Price
1+ $1.3800 $1.38
50+ $1.1080 $55.4
100+ $0.8780 $87.8
500+ $0.7443 $372.15
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
704
Minimum:
1
MPQ:
1
Multiples:
1
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