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GA50JT12-247
GA50JT12-247Reference image

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Mfr. #:
GA50JT12-247
Batch:
new
Description:
Through hole 1200 V 100A (Tc) 583W (Tc) TO-247AB
Datasheet:
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Specifications
frequently asked question
Product AttributeAttribute Value
Manufacturer GeneSiC Semiconductor
Series -
Packaging Tubes
FET Type -
Technology SiC (Silicon Carbide Junction Transistor)
Drain Source Voltage (Vdss) 1200 V
Current at 25°C - Continuous Drain (Id) 100A (Tc)
Drive Voltage (Rds On Max, Rds On Min) -
On Resistance (max) at Id, Vgs 25 mOhm @ 50A
Vgs(th) (max) at Id -
Vgs (max) -
Input Capacitance (Ciss) (max) at Vds 7209 pF @ 800 V
FET Function -
Power dissipation (max) 583W (Tc)
Operating temperature 175°C (TJ)
Mounting type Through hole
SupplierDevice package TO-247AB
Package/case TO-247-3
Other product information

Advantage price,GA50JT12-247 in stock can be shipped on the same day

In Stock: Inquiry
Qty.Unit PriceExt. Price
1+ $112.3154 $112.3154
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
Inquiry
Minimum:
1
MPQ:
1
Multiples:
1
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