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IRF5305PBF
IRF5305PBFReference image

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Mfr. #:
IRF5305PBF
Batch:
new
Description:
Through hole P channel 55 V 31A (Tc) 110W (Tc) TO-220AB
Datasheet:
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Specifications
frequently asked question
Product AttributeAttribute Value
Infineon Technologies
HEXFET?
Fittings
Available
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 55 V
Current at 25°C - Continuous Drain (Id) 31A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 60 mOhm @ 16A, 10V
Vgs(th) (max) at Id 4V @ 250μA
Gate Charge?(Qg) (max) at Vgs 63 nC @ 10 V
Vgs (max) ±20V
Various Vds Input Capacitance (Ciss) (Max) 1200 pF @ 25 V
FET Function -
Power Dissipation (Max) 110W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
IRF5305
Other product information

Advantage price,IRF5305PBF in stock can be shipped on the same day

In Stock: 40915
Qty.Unit PriceExt. Price
1+ $1.5484 $1.5484
50+ $1.2429 $62.145
100+ $0.9850 $98.5
500+ $0.8348 $417.4
1000+ $0.6801 $680.1
2000+ $0.6402 $1280.4
5000+ $0.6097 $3048.5
10000+ $0.5816 $5816
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
40915
Minimum:
1
MPQ:
1
Multiples:
1
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